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DS18B20-PAR
 
17 of 19 
ABSOLUTE MAXIMUM RATINGS*
Voltage on any pin relative to ground
0.5V to +6.0V
Operating temperature
55癈 to +100癈
Storage temperature
55癈 to +125癈
Soldering temperature
See J-STD-020A Specification
*These are stress ratings only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
 
DC ELECTRICAL CHARACTERISTICS
(-55癈 to +100癈; V
PU
=3.0V to 5.5V)
PARAMETER
SYMBOL
CONDITION     MIN    TYP
MAX     UNITS   NOTES
Pullup Supply
Voltage
V
PU
 
 
3.0
 
5.5
V
1,2
Thermometer Error
t
ERR
 
-10癈 to +85癈
 
 
苯
 
 
 
-55癈 to +100癈
 
 
?
癈
 
3
Input Logic Low
V
IL
 
 
-0.3
 
+0.8
V
1,4,5
Input Logic High
V
IH
 
 
3.0
 
5.5
V
1,6
Sink Current
I
L
 
V
I/O
=0.4V
4.0
 
 
mA
1
Active Current
I
DQA
 
 
 
1
1.5
mA
7
DQ Input Current
I
DQ
 
 
 
5
 
礎
8
Drift
 
 
 
?.2
 
癈
9
NOTES:
1.    All voltages are referenced to ground.
2.    The Pullup Supply Voltage specification assumes that the pullup device (resistor or transistor) is
ideal, and therefore the high level of the pullup is equal to V
PU
. In order to meet the V
IH
 spec of the
DS18B20-PAR, the actual supply rail for the strong pullup transistor must include margin for the
voltage drop across the transistor when it is turned on; thus: V
PU_ACTUAL
= V
PU_IDEAL
+ V
TRANSISTOR
.
3.    See typical performance curve in Figure 16.
4.    Logic low voltages are specified at a sink current of 4 mA.
5.    To always guarantee a presence pulse under low voltage parasite power conditions, V
ILMAX
 may have
to be reduced to as low as 0.5V.
6.    Logic high voltages are specified at a source current of 1 mA.
7.    Active current refers to supply current during active temperature conversions or EEPROM writes.
8.    DQ line is high (hi-Z state).
9.    Drift data is based on a 1000 hour stress test at 125癈.
 
 
AC ELECTRICAL CHARACTERISTICS: NV MEMORY
 
(-55癈 to +100癈; V
PU
=3.0V to 5.5V)
PARAMETER
SYMBOL
CONDITION
MIN
TYP
MAX
UNITS
NV Write Cycle Time
t
wr
 
 
 
2
10
ms
EEPROM Writes
N
EEWR
 
-55癈 to +55癈
50k
 
 
writes
EEPROM Data Retention
t
EEDR
 
-55癈 to +55癈
10
 
 
years
 
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